1、Firstly, the theory and fabrication of molecular beam epitaxy are described in detail.
本文首先詳細介紹了分子束外延設備的原理和構造。

2、LIQUID PHASE EPITAXY OF InSb_(1-x)Bi_x
InSb_(1-x)Bi_x的液相外延

3、In this paper, an experimental apparatus for the low pressure epitaxy of silane is described.
本文介紹了硅烷低壓外延的實驗裝置。

4、The environmental morals have their intension, the epitaxy and main content.
環(huán)境道德有其內涵、外延和主要內容。

5、A Study on Intrinsic Silicon Epitaxy by UHV/CVD
UHV/CVD生長本征硅外延層的研究

6、Vapor Phase Epitaxy of Hg_(1-x)Cd_xTe on CdTe substrates
在CdTe襯底上汽相外延Hg_(1-x)Cd_xTe

7、Epitaxy of strained Si on the obtained SGOI substrate.
在獲得的SGOI襯底材料上生長高質量應變硅材料。

8、Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
外延沉積接著用以形成一外延層于該外延表面上。

9、Finally, some reference criteria for the quality inspection of epitaxy chip materials are given.
最后給出了幾個外延晶片材料質量評估的參照標準。

10、All the procedure for epitaxy growth was controlled by a computer.
外延生長工藝過程由計算機控制。

11、A brief review is given to the present status and prospect for atomic layer epitaxy technique.
綜述了原子層外延(ale)技術的現(xiàn)狀及其發(fā)展趨勢。

12、Lateral Epitaxy of SOl under Laser Radiation
絕緣襯底上硅膜的激光側向外延

13、The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
利用SIMOX技術和硅外延工藝制備了厚膜SOI材料。

epitaxy翻譯